PART |
Description |
Maker |
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
HS-RTX2010 HS-RTX2010RH HS8-RTX2010RH HS9-RTX2010R |
Radiation Hardened Real Time Express??Microcontroller Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, CQFP84 Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, UUC84 Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70 Radiation Hardened Real Time Express Microcontroller
|
Advanced Analogic Technologies, Inc. Intersil, Corp. Intersil Corporation
|
JANSR2N7408 FN4637 |
Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85 Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs From old datasheet system Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant,N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
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HS9-4423BRH HS9-4423BRH-8 HS-4423BRH HS9-4423BRH-Q |
Radiation Hardened Dual, Inverting Power MOSFET Drivers 2 A 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, CDFP16 Radiation Hardened Dual/ Inverting Power MOSFET Drivers
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Intersil, Corp. Intersil Corporation
|
HS-2510RH 5962D9568601VPA HS9-2510RH-Q HS7-2510RH- |
Radiation Hardened High Slew Rate Operational Amplifier Radiation Hardened High Slew Rate Operational Amplifier OP-AMP, 8000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CDIP8 CAP TANT LOESR 330UF 10V 20% SMD Radiation Hardened High Slew Rate
Operational Amplifier(抗辐射高输出电压转换速率、低偏置电流运算放大
|
Intersil, Corp. Intersil Corporation
|
FSPL230D1 FSPL230F FSPL230F3 FSPL230F4 FSPL230R4 F |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
5962F9467602VPA 5962F9467602VPC HS7B-1100RH-Q HS7- |
Radiation Hardened/ Ultra High Speed Current Feedback Amplifier with Offset Adjust Radiation Hardened, Ultra High Speed
Current Feedback Amplifier(抗辐射超高速电流反馈放大器) Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Gray; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes Radiation Hardened, Ultra High Speed Current Feedback Amplifier VIDEO AMPLIFIER, CDIP8 Radiation Hardened, Ultra High Speed Current Feedback Amplifier 1 CHANNEL, VIDEO AMPLIFIER, CDIP8 Radiation Hardened, Ultra High Speed Current Feedback Amplifier
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Intersil Corporation Intersil, Corp.
|
IRHY57230CMSE |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package RADIATION HARDENED POWER MOSFET
|
International Rectifier
|
IRHF57133SE |
RADIATION HARDENED POWER MOSFET 130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package
|
International Rectifier
|
IRHM57264SE |
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-254AA package RADIATION HARDENED POWER MOSFET THRU-HOLE
|
IRF[International Rectifier]
|
IRHM7130 IRHM3130 IRHM8130 IRHM4130 |
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package RADIATION HARDENED POWER MOSFET THRU-HOLE
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IRF[International Rectifier]
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